We are engaged in the design, manufacture and sales of IGBT power modules, which are mainly used in electric locomotives and EMUs.
An IGBT power module combines the IGBT driver, various driver protection circuits, high-performance IGBTs and water-cooling devices, and it is a voltage-controlled electric semiconductor with composite control, comprising a bipolar junction transistor (BJT) and the components of Metal Oxide Semiconductor Field Effect Transistor (MOSFET). The high input resistor and Giant Transistor (GTR, a kind of BJT with high withstanding capacities for high voltages and currents) of the MOSFET have the advantage of low puncture voltages; characteristics of GTR are low breakdown, voltage step-down, high charge density but high driven current, while MOSFET has the advantages of low driven force, high switching speed but high puncture voltage and low charge density. The IGBT combines the advantages of both in one device. IGBTs are mainly used for applications of medium and high power, such as control of power supply switches and traction motors. Large IGBT power modules are often formed with multiple devices in parallel, with a blocking voltage of 6500V and current control capabilities of hundreds of Amperes. The advanced semiconductors technology allows IGBT power modules to be applied in rectifiers/converters and makes it one of the necessary devices for DC/AC power conversions in electric locomotives. With parallel connection of power modules converters with an output power of more than 3.5 MW can be realized.